[19p-B5-1~22] 15.4 III-V-group nitride crystals

△ [19p-B5-6] High-Speed Growth of In- and N-Polar InN Layers Using Two-Step Precursor Generation Hydride Vapor Phase Epitaxy

^○Hironobu Saito¹, Naoto Fujita¹, Ryota Imai¹, Rie Togashi¹, Hisashi Murakami¹, Yoshinao Kumagai¹, Akinori Koukitu¹ (Tokyo Univ. of Agri. & Tech.¹)

Keywords:半導体, InN, HVPE