[19p-C8-1~18] 13.6 Silicon devices / Integration technology

△ [19p-C8-13] Channel Length Scaling Limits of III-V Channel MOSFETs Governed By Source-Drain Direct Tunneling

^○(M1)Masaki Ohmori¹, Shunsuke Koba¹, Yōsuke Maegawa¹, Hideaki Tsuchiya^1,3, Yoshinari Kamakura^2,3, Nobuya Mori^2,3, Matsuto Ogawa¹ (Kobe Univ.¹, Osaka Univ.², JST CREST³)

Keywords:ソースドレイン直接トンネリング,III-V MOSFET,ウィグナーモンテカルロ