[19p-C8-1~18] 13.6 Silicon devices / Integration technology

△ [19p-C8-2] Characterization of MOS Si/SiGe quantum point contact

^○Jun Kamioka¹, Tetsuo Kodera^1,2,3, Kenta Takeda⁴, Toshiaki Obata⁴, Waseem. M. Akhtar⁴, Seigo Tarucha^2,4,5, Shunri Oda¹ (QNERC, Tokyo Tech.¹, NanoQuine, the Univ. of Tokyo², PRESTO-JST³, The Univ. of Tokyo⁴, RIKEN⁵)

Keywords:量子ポイントコンタクト,シリコンゲルマニウム