[19p-C9-1~7] 13.7 Simulation

[19p-C9-4] On the discrete dopant effects of tunnel FETs

^○Koichi Fukuda¹, Takahiro Mori¹, Wataru Mizubayashi¹, Yukinori Morita¹, Akihito Tanabe¹, Meishoku Masahara¹, Tetsuji Yasuda¹, Shinji Migita¹, Hiroyuki Ota¹ (AIST GNC¹)

Keywords:tunnel FET,discrete dopant,simulation