[19p-C9-1~7] 13.7 Simulation

Thu. Sep 19, 2013 1:30 PM - 3:15 PM C9 (TC3 2F-202)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 1:45 PM

[19p-C9-1] Effect of the bond disorder to the transport property of the hopping conduction in the disorder model

^○Takeshi Egami¹, Koshiro Suzuki¹, Katsuhiro Watanabe¹ (Canon Inc.¹)

1:45 PM - 2:00 PM

[19p-C9-2] Effect of Discrete Impurity Potential on Electric Transport of Silicon Nanowires

^○Restu Zulhidza Muhammad¹, Akiko Ueda¹, Katsuhisa Yoshida¹, Syuta Honda¹, Nobuyuki Sano¹ (Univ. Tsukuba¹)

2:00 PM - 2:15 PM

[19p-C9-3] Numerical simulation of current noise caused by potential fluctuation in semiconductor nanowire FETs

^○Yuki Furubayashi¹, Matsuto Ogawa¹, Satofumi Souma¹ (Kobe univ.¹)

2:15 PM - 2:30 PM

[19p-C9-4] On the discrete dopant effects of tunnel FETs

^○Koichi Fukuda¹, Takahiro Mori¹, Wataru Mizubayashi¹, Yukinori Morita¹, Akihito Tanabe¹, Meishoku Masahara¹, Tetsuji Yasuda¹, Shinji Migita¹, Hiroyuki Ota¹ (AIST GNC¹)

2:30 PM - 2:45 PM

[19p-C9-5] Improve of Tunnel FET performance using narrow bandgap semiconductor silicide/Si hetero-structure source electrode

^○Hiroki Hasegawa¹, Yan Wu¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech.FRC¹, Tokyo Tech.IGSSE²)

2:45 PM - 3:00 PM

[19p-C9-6] Numerical Study for Junctionless Transistor: Dependence on Gate Structure

^○Toru Shibamiya¹, Katsuhisa Yoshida¹, Nobuyuki Sano¹ (Inst. Appl. Phys., Univ. of Tsukuba¹)

3:00 PM - 3:15 PM

[19p-C9-7] Monte Carlo Simulation of Seebeck Coefficient of Si Nanostructure with Barrier Layers

^○Indra Nur Adisusilo¹, Kentaro Kukita¹, Yoshinari Kamakura^1,2 (Osaka Univ.¹, JST CREST²)