Analysis of Electrical Field in Surface Enhanced Raman Spectroscopy Using Strained-Si Substrate

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.1 Basic properties and their evaluation

Fri. Sep 20, 2013 9:00 AM - 12:15 PM C9 (TC3 2F-202)

10:45 AM - 11:00 AM

^○Siti Norhidayah Che Mohd Yusoff¹, Daisuke Kosemura¹, Takahiro Kijima¹, Atsushi Ogura¹ (Meiji Univ.¹)

Keywords:Strained-Si,Surface Enhanced Raman Spectroscopy,Stress