[28a-F2-1~11] 6.3 Oxide-based electronics

Thu. Mar 28, 2013 10:00 AM - 1:00 PM F2 (E3 3F-303)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[28a-F2-1] △The effect of spinel-ferrite buffer layers on the Verwey transition in Fe₃O₄ thin films.

^○Tetsuhiro Takahashi¹, Masaki Nakano², Masashi Kawasaki¹, Atsushi Tsukazaki^2,3 (Dept. Appl. Phys., Univ. Tokyo¹, Dept. Adv. Mater. Sci., Uni. Tokyo², JST-PRESTO³)

[28a-F2-2] △Anisotropic lattice relaxation in brownmillerite SrFeO_2.5 epitaxial thin films

^○Kei Hirai¹, Ryotaro Aso¹, Daisuke Kan¹, Noriya Ichikawa¹, Hiroki Kurata^1,2, Yuichi Shimakawa^1,2 (ICR, Kyoto Univ.¹, JST-CREST²)

[28a-F2-3] △Metal Oxide Nanoconstrictions Fabricated by a 3D Nanotemplate PLD Method

^○Takayoshi Kushizaki¹, Kohei Fujiwara¹, Yasushi Fujiwara¹, Azusa Hattori¹, Hidekazu Tanaka¹ (ISIR¹)

[28a-F2-4] Control of electronic phases in correlated electron oxides (Nd, Sm)NiO₃ by HfO₂ gate oxide

^○shutaro Asanuma^1,2, Hisashi Shima^1,2, Hiroyuki Yamada¹, Isao Inoue^1,2, Hiroshi Akoh^1,2, Hiroyuki Akinaga^1,2, Akihito Sawa^1,2 (AIST¹, JST-CREST²)

[28a-F2-5] △Suppression of charge disproportionation in PrNiO3 thin films

^○（PC）Enju Sakai¹, Masatomo Tamamitsu², Kohei Yoshimatsu^1,3, Koji Horiba¹, Atsushi Fujimori³, Masaharu Oshima², Hiroshi Kumigashira^1,4 (KEK-PF&CMRC¹, Univ. Tokyo², Univ. Tokyo³, JST-PREST⁴)

[28a-F2-6] △Growth and properties of NdNiO₂ epitaxial thin films

^○Tomoya Onozuka¹, Akira Chikamatsu^1,2, Tsukasa Katayama¹, Kei Shigematsu¹, Tomoteru Fukumura^1,2, Tetsuya Hasegawa^1,2,3 (Univ. of Tokyo¹, JST-CREST², KAST³)

[28a-F2-6.1] Break(15min)

[28a-F2-7] △Thin film growth and materials properties of Sr₂TiRuO₆ double-perovskites

^○Kengo Nogami¹, Hisanori Mashiko¹, Enju Sakai², Hiroshi Kumigashira^2,3, Takayoshi Oshima¹, Akira Ohtomo^1,3,4 (Graduate School of Science and Engineering, Tokyo Tech¹, PF-KEK², TIES and MCES³, JST-ALCA⁴)

[28a-F2-8] Structure-property relationships in epitaxially-stabilized tetragonal SrRuO₃ thin films

^○Daisuke Kan¹, Ryotaro Aso¹, Hiroki Kurata^1,2, Yuichi Shimaakawa^1,2 (ICR Kyoto Univ.¹, JST-CREST²)

[28a-F2-9] △Analyzing local structure and strain of SrRuO₃ epitaxial thin films using STEM

^○Ryotaro Aso¹, Daisuke Kan¹, Yuichi Shimakawa^1,2, Hiroki Kurata^1,2 (ICR, Kyoto Univ.¹, JST-CREST²)

[28a-F2-10] △Atomically resolved thickness-dependent growth processes of manganite thin films

^○Ryota Shimizu¹, Takeo Ohsawa¹, Katsuya Iwaya¹, Susumu Shiraki¹, Taro Hitosugi^1,2 (Tohoku Univ.¹, JST-PRESTO²)

[28a-F2-11] △Transport properties and electronic states of single-crystal Sr₂MgMoO_6-δ thin films

^○Kei Shigematsu¹, Akira Chikamatsu^1,2, Tomoteru Fukumura^1,2, Satoshi Toyoda³, Eiji Ikenaga⁴, Tetsuya Hasegawa^1,2,5 (Univ. of Tokyo¹, JST-CREST², KEK-IMSS³, JASRI/SPring-8⁴, KAST⁵)

Session information

[28a-F2-1~11] 6.3 Oxide-based electronics