Session information

Regular sessions(Poster presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[29p-PA2-1~10] 14.3 Electron devices and Process technology

Fri. Mar 29, 2013 1:30 PM - 3:30 PM PA2 (1st gymnasium)

Poster Session 13:30〜15:30(PA)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[29p-PA2-1] Molecular beam epitaxial growth of InAs/AlGaSb heterostructures and fabrication of hetero-junction field-effect transistors using a high dielectric constant gate material

^○kouhei Moriguchi¹, Kazuiti Nishisaka¹, Toshihiko Maemoto¹, Kenichi Ogata¹, Shigehiko Sasa¹ (Osaka Institute of Technology¹)

[29p-PA2-2] Band Structures of Si/GaAs heterojunctions by Using Surface-Activated Bonding

^○Jianbo Liang¹, Tatusya Miyazaki¹, Syouta Nisida¹, Masasi Morimoto¹, Naoteru Shigekawa¹ (Osaka City University¹)

[29p-PA2-3] Fundamental sturdy on Be-ion implanted GaN grown on a GaN free-standing substrate

^○Yuya Ishida¹, Takuya Oikawa¹, Kazuki Nomoto², Naoki Kaneda³, Tadatoshi Tsuchiya³, Tomoyoshi Mishima³, Tohru Nakamura¹ (Hosei University¹, University of Notre Dame², Hitachi Cable Ltd.³)

[29p-PA2-4] Sub-nm step by step etching of AlGaN/GaN using ozone oxidation

^○Yusuke Takei¹, Masayuki Kamiya¹, Kazuma Terayama¹, Hiroaki Yonezawa¹, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Ahmet Parhat², Takeo Hattori², Hiroshi Iwai² (Tokyo Inst. of Technology¹, Tokyo Inst. of Technology²)

[29p-PA2-5] DC/pulse characteristics in AlGaN /GaN HEMTs on semi-insulating GaN substrate

^○Takuma Nanjo¹, Akifumi Imai¹, Yosuke Suzuki¹, Hiroyuki Okazaki¹, Muneyoshi Suita¹, Marika Nakamura¹, Eiji Yagyu¹, Hiroshi Ohji¹ (Mitsubishi Electric.¹)

[29p-PA2-6] Evaluation of radiated emission noise of GaN-HEMT switching circuit

^○Toshihide Ide¹, Ryousaku Kaji¹, Mitsuaki Shimizu¹, Kenji Mizutani², Hiroaki Ueno², Nobuyuki Otsuka², Tetsuzo Ueda², Tsuyoshi Tanaka² (AIST ADPERC¹, Panasonic²)

[29p-PA2-7] Switching loss analysis of commercial 200V class GaN-HEMT and Si-SJMOSFET

^○（M2）Tomoya Minami¹, Hiroshi Chonan², Toshihide Ide², Mitsuaki Shimizu², Noboru Miura¹ (Meiji Univ¹, AIST ADPERC²)

[29p-PA2-8] Investigation of variable factor under the gate electrode using transparent gate AlGaN/GaN HEMT

^○Tomotaka Narita¹, Akio Wakejima¹, Takashi Egawa¹ (Nagoya Inst. of Tech.¹)

[29p-PA2-9] A simulation study on drain leakage current of AlGaN/GaN HEMT

^○Toshiyuki Oishi¹, Kazuo Hayashi¹, Yoshitaka Kamo¹, Yutaro Yamaguchi¹, Hiroshi Otsuka¹, Koji Yamanaka¹, Masatoshi Nakayama¹, Yasuyuki Miyamoto² (Mitsubishi Electric¹, Tokyo Institute of Technology²)

[29p-PA2-10] C-V profile analysis of plasma-induced defects in n-GaN upon bias-anneal

Koji Takeshita¹, ^○Seiji Nakamura¹, Tsugunori Okumura¹ (Tokyo Metropolitan Univ.¹)

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