[29p-PB3-1~6] 13.7 Simulation

Fri. Mar 29, 2013 1:30 PM - 3:30 PM PB3 (2nd gymnasium)

Poster Session 13:30〜15:30(PB)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[29p-PB3-1] Examination of atomic doping effect for ZrO2 by first-principles calculations

^○Syota Oshima¹, Masao Iwamatu¹, Takuya Maruizumi¹, Yasuhiro Siraki¹ (Tokyo City Univ¹)

[29p-PB3-2] Characteristic analysis of tunnel FET based on multiband envelope function method

^○（M1）Hiroto Nagai¹, Takashi Nakano¹, Yasuaki Miyoshi¹, Matsuto Ogawa¹, Satofumi Souma¹ (Kobe Univ.¹)

[29p-PB3-3] Impact of Dopant Mass on Ballistic Phonon Thermal Transport in Silicon Nanowires

^○（P）Junichi Hattori^1,3, Shigeyasu Uno^2,3 (Ritsumeikan Univ.¹, Ritsumeikan Univ.², JST, CREST³)

[29p-PB3-4] Calculation of Seebeck Coefficient of Heavily Doped Silicon

^○Yoshinari Kamakura^1,2, Indra Adisusilo¹, Kentaro Kukita¹ (Osaka Univ.¹, JST CREST²)

[29p-PB3-5] Analysis of breakdown voltage for self-biased channel diode by deep boron ion implantation

^○Daisuke Yamada¹, Tsugutomo Kudoh¹, Fumihiko Sugawara² (Kanagawa Institute of Tech.¹, Tohoku Gakuin Univ.²)

[29p-PB3-6] Effect of dislocation accumulation in STI type ULSI cells on their electric characteristics(2)

^○（M1）Kenta Shimada¹, Yasuhiro Shiraki¹, Takuya Maruizumi¹, Koichi Hayakawa¹, Yosuke Takahashi², Mitsuhiro Sato², Ken Yamaguchi³ (Tokyo City Univ.¹, Kitami Institute of Tech.², Advance Soft³)