The 60th JSAP Spring Meeting,2013

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Regular sessions(Poster presentation)

21. Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[27a-PB4-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Mar 27, 2013 9:30 AM - 11:30 AM PB4 (2nd gymnasium)

[27a-PB4-16] △Growth of high quality ZnO films by using high speed rotating disk type MOCVD

○Yuto Hiragino1, Yutaka Furubayashi2, Kyota Moriyama1, Yasuhisa Fujita1 (Graduate school of Sci. & Eng. Shimane Univ.1, Organization for the Promotion of Project Research Shimane Univ.2)

Keywords:酸化亜鉛、薄膜