[27p-A3-1~17] 8.4 Plasma etching

[27p-A3-2] Correlation between Plasma Parameters and Etching Shape of Si in HBr/O2/N2 Plasma

^○Yasuhiro Nojiri¹, daiki Iino¹, Rikyu Ikariyama¹, Masato Sawada¹, Keiji Suzuki¹, Takeshi Yamauchi¹ (Corporate Manufacturing Engineering Center, Toshiba Corp.¹)

Keywords:Siドライエッチング、半導体