[27p-G4-1~11] Recent progress of evaluation of surfaces and interfaces in GaN-based materials --As an approach starting from material physics for device improvement

[27p-G4-1] Recent progress of evaluation of surfaces and interfaces in GaN-based materials --as an approach starting from material physics for device improvement--

^○Kenji Shiojima¹, Seiji Nakamura² (Univ. of Fukui¹, Tokyo Metropolitan Univ.²)

Keywords:GaN、結晶欠陥、電極界面