The 60th JSAP Spring Meeting,2013

Presentation information

Symposium(Oral presentation)

Symposium » ・Recent progress of evaluation of surfaces and interfaces in GaN-based materials --As an approach starting from material physics for device improvement

[27p-G4-1~11] Recent progress of evaluation of surfaces and interfaces in GaN-based materials --As an approach starting from material physics for device improvement

Wed. Mar 27, 2013 1:40 PM - 5:45 PM G4 (B5 1F-2104)

[27p-G4-2] The Role of SRH Model:From Side-gating Effects to Current Collapse

Yasuo Ohno1 (The Univ. of Tokushima1)

Keywords:SRHモデル、サイドゲート効果、電流コラプス