[27p-G4-1~11] Recent progress of evaluation of surfaces and interfaces in GaN-based materials --As an approach starting from material physics for device improvement

[27p-G4-5] Evaluation of low-Mg-doped p-GaN Schottky diodes

^○Kenji Shiojima¹ (Univ. of Fukui¹)

Keywords:p-GaN、ショットキー接触、障壁高さ