[27p-G4-1~11] Recent progress of evaluation of surfaces and interfaces in GaN-based materials --As an approach starting from material physics for device improvement

[27p-G4-6] Characterization and control of surfaces and interfaces of InAlN/GaN heterostructures

^○Masamichi Akazawa¹, Tamotsu Hashizume^1,2 (Hokkaido University¹, JST-CREST²)

Keywords:InAlN、表面、界面