[28a-G11-1~9] 14.3 Electron devices and Process technology

[28a-G11-6] Evaluation of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates

^○Kenji Shiojima¹, Yuuhei Kihara¹, Toshitika Aoki¹, Naoki Kaneda², Tomoyoshi Mishima² (Univ. of Fukui¹, Hitachi Cable²)

Keywords:GaN、ショットキー接触、障壁高さ