[28a-G19-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[28a-G19-5] Formation of semi-insulating layers on β-Ga₂O₃ single crystals by thermal oxidation

^○Takayoshi Oshima¹, Kenichi Kaminaga¹, Akira Mukai¹, Kohei Sasaki², Takekazu Masui³, Akito Kuramata², Shigenobu Yanakoshi², Shizuo Fujita⁴, Akira Ohtomo^1,5 (Tokyo Tech¹, Tamura Corp.², KOHA Co., Ltd³, Kyoto Univ.⁴, TIES & MCES⁵)

Keywords:酸化ガリウム、gallium oxide、Ga2O3