[28a-G21-1~11] 15.4 III-V-group nitride crystals

[28a-G21-3] △Fabrication of 2-inch GaN wafers using coalescence growth of GaN crystals by the Na-flux method

^○Masayuki Imanishi¹, Tatsuya Someno¹, Kosuke Murakami¹, Hiroki Imabayashi¹, Hideo Takazawa¹, Yuma Todoroki¹, Daisuke Matsuo¹, Mihoko Maruyama¹, Mamoru Imade¹, Masashi Yoshimura¹, Yusuke Mori¹ (Graduate School of Engineering, Osaka Univ.¹)

Keywords:GaN、Naフラックス、結合成長