[28a-G22-1~13] 15.6 IV-group-based compounds

[28a-G22-10] Fabrication of (000-1)4H-SiC MOS structures by ECR-sputtering

^○Eiji Waki¹, Shuichi Ono¹, Manabu Arai¹, Kimiyoshi Yamasaki¹ (New JRC¹)

Keywords:SiC、MOS、界面