[28a-G22-1~13] 15.6 IV-group-based compounds

[28a-G22-11] Interface Properties near Conduction Band Edge at Al₂O₃/SiC MOS Interfaces

^○Noriyuki Taoka¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹)

Keywords:SiC、Interface trap、Slow trap