Luminescence properties of Eu-doped GaN under resonant excitation and quantitative evaluation of luminescent sites

Presentation information

Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

Thu. Mar 28, 2013 10:00 AM - 12:45 PM G5 (B5 1F-2105)

^○Ryuta Wakamatsu¹, Dong-gun Lee¹, Koizumi Atsushi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

Keywords:Gallium nitride、Europium、photoluminescence