The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[28a-G5-1~10] 14.4 Optical properties and light-emitting devices

Thu. Mar 28, 2013 10:00 AM - 12:45 PM G5 (B5 1F-2105)

[28a-G5-7] Eu precursor dependence of luminescent sites in Eu-doped GaN

○Ryuta Wakamatsu1, Yasuhisa Saitou1, Dong-gun Lee1, Hironori Ofuchi2, Tetsuo Honma2, Atsushi Koizumi1, Yasufumi Fujiwara1 (Osaka Univ.1, JASRI/SPring-82)

Keywords:Europium、Gallium nitride、EXAFS