[28a-G6-1~11] 13.5 Si process technology

[28a-G6-10] III-V/Ge High-mobility Channel Layer Transfer onto 300 mm Silicon Wafers Using Epitaxial Lift-Off Technique

^○（PC）Eiko Mieda¹, Tatsuro Maeda¹, Noriyuki Miyata¹, Tetsuji Yasuda¹, Atsuhiko Maeda¹, Yuichi Kurashima¹, Hideki Takagi¹, Takeshi Aoki², Taketsugu Yamamoto², Kikuchi Toshiyuki³, Osamu Ichikawa², Takenori Osada², Masahiko Hata², Arito Ogawa³, Yasuo Kunii³ (AIST¹, Sumitomo Chemical², Hitachi Kokusai Electric³)

Keywords:semiconductor、epitaxal lift-off、LSI manufacturing