[28a-G9-1~11] 13.6 Silicon devices / Integration technology

[28a-G9-10] Influence of Vth Variability on 0.4V-Operation in Silicon-on-Thin-Buried Oxide (SOTB) CMOS SRAM

^○Hirofumi Shinohara¹, Yoshiki Yamamoto¹, Hideki Makiyama¹, Toshiaki Iwamatsu¹, Hidekazu Oda¹, Shiro Kamohara¹, Nobuyuki Sugii¹, Yasuo Yamaguchi¹, Tomoko Mizutani², Toshiro Hiramoto² (LEAP¹, University of Tokyo²)

Keywords:SOTB、SRAM、0.4V動作