The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

13. Semiconductors A (Silicon) » 13.6 Silicon devices / Integration technology

[28a-G9-1~11] 13.6 Silicon devices / Integration technology

Thu. Mar 28, 2013 9:00 AM - 11:45 AM G9 (B5 2F-2203)

[28a-G9-8] Proposal of nonvolatile dual-port SRAM cell using pseudo-spin-MOSFETs and its nonvolatile PG application

Shuu'ichirou Yamamoto1, ○Yusuke Shuto2,3, Satoshi Sugahara1,2 (IGS, Tokyo Inst. Tech.1, ISEL, Tokyo Inst. Tech.2, KAST3)

Keywords:不揮発性パワーゲーティング、不揮発性デュアルポートSRAM、ブレークイーブンタイム