[28p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[28p-G19-12] I-V characteristic of Au/ZnO Schottky diode

^○（M1）Yuji Kandori¹, Koji Abe¹ (Nagoya Institute of Technology¹)

Keywords:酸化亜鉛