[28p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[28p-G19-13] n-ZnO/p-ZeTe heterojunction characteristics formed by bias voltage PLD and direct bonding

^○Takuya Akao¹, Kazuya Komatsu¹, Yuki Seno¹, Takao Komiyama¹, Yasunori Tyounan¹, Hiroyuki Yamaguchi¹, Takashi Aoyama¹ (Akita Prefectural Univ.¹)

Keywords:酸化亜鉛、ZnTe、貼り合わせ