[28p-G2-1~16] 13.3 Insulator technology

[28p-G2-1] ▲High Mobility Ge CMOS devices with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation

^○Rui Zhang¹, Ju-Chin Lin¹, Po-Chin Huang¹, Noriyuki Taoka^1,2, Mitsuru Takenaka¹, Shinichi Takagi¹ (Univ. Tokyo¹, Univ. Nagoya²)

Keywords:germanium、MOSFET、equivalent oxide thickness