The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

13. Semiconductors A (Silicon) » 13.3 Insulator technology

[28p-G2-1~16] 13.3 Insulator technology

Thu. Mar 28, 2013 2:30 PM - 6:45 PM G2 (B5 1F-2102)

[28p-G2-13] ▲Mobility Degradation of Ge MOSFETs in High Ns Region due to Interface States inside Conduction and Valence Bands of Ge

○（P）Rui Zhang1, Po-Chin Huang1, Ju-Chin Lin1, Mitsuru Takenaka1, Shinichi Takagi1 (Univ. Tokyo1)

Keywords:germanium, mobility, interface states