[28p-G2-1~16] 13.3 Insulator technology

[28p-G2-6] ▲Thermal annealing effect on the quality of GeO2 film formed by radical oxidation of Ge

^○Woojin Song^1,2, Choong Hyun Lee^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (The University of Tokyo¹, JST-CREST²)

Keywords:Chemical shift、GeO2、annealing