The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

15. Crystal Engineering » 15.6 IV-group-based compounds

[28p-G22-1~19] 15.6 IV-group-based compounds

Thu. Mar 28, 2013 1:45 PM - 6:45 PM G22 (B5 4F-2406)

[28p-G22-11] Characterization of Mg-Implanted 4H-SiC layers

○Tatsuya Morine1, Kohji Murata1, Hiroaki Iida1, Akifumi Kasai1, Hideharu Matsuura1, Shinji Nagamachi2 (Osaka Electro-Communication Univ.1, Ion Technology Center Co., Ltd2)

Keywords:4H-SiC、Mg-Implanted