[28p-G6-1~17] 13.5 Si process technology

[28p-G6-17] Transient Current Property of CeO_x/NiSi₂ Resistive Switching Devices

^○Shinichi Kano¹, Chunmeng Dou¹, Hadi Mokhammad¹, Kuniyuki Kakushima², Ahmet Parhat¹, Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Kazuo Tsutsui², Kenji Natori¹, Takeo Hattori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

Keywords:ReRAM