The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

13. Semiconductors A (Silicon) » 13.6 Silicon devices / Integration technology

[28p-G9-1~18] 13.6 Silicon devices / Integration technology

Thu. Mar 28, 2013 1:30 PM - 6:30 PM G9 (B5 2F-2203)

[28p-G9-11] Demonstration of 3 nm-Channel Length Junctionless-FETs Prepared by Anisotropic Wet Etching

○Shinji Migita1, Yukinori Morita1, Meishoku Masahara1, Hiroyuki Ota1 (AIST-GNC1)

Keywords:Junctionless、SOIFET、V-groove