[28p-G9-1~18] 13.6 Silicon devices / Integration technology

[28p-G9-12] Threshold Voltage Control by Sub-1V Back-gate Biasing for Thin Body and BOX Ge-on-Insulator MOSFETs

^○Keiji Ikeda¹, Yoshihiko Moriyama^1,2, Mizuki Ono¹, Yuuichi Kamimuta¹, Toshifumi Irisawa¹, Yoshiki Kamata¹, Akira Sakai², Tsutomu Tezuka¹ (AIST-GNC¹, Osaka Univ.²)

Keywords:Ge、MOSFET