[29a-G11-5] 0.25μm InP/InGaAs DHBT with a BVCEO of 12 V and an fmax of 370 GHz
Keywords:ヘテロ接合バイポーラトランジスタ
Presentation information
Regular sessions(Oral presentation)
14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology
[29a-G11-1~8] 14.3 Electron devices and Process technology
Fri. Mar 29, 2013 9:30 AM - 11:30 AM G11 (B5 2F-2205)