[29p-A3-1~6] 16.2 Processing technologies and devices

[29p-A3-6] Control of Growth Process for Low Dangling-Bond Defect Density in a-SiO:H

^○Yasushi Sobajima^1,2, Shinnosuke Kakimoto¹, Ryoji Okumoto¹, Chitose Sada^1,2, Akihisa Matsuda^1,2, Hiroaki Okamoto^1,2 (Grad. School of Eng. Sci., Osaka Univ.¹, JST-CREST²)

Keywords:アモルファス、アモルファスシリコン酸化物、プラズマCVD