[29p-B8-1~10] Frontiers of process technology for Si-related thin films

[29p-B8-9] Low-temperature formation of poly-Ge_1-xSn_x by underwater laser annealing

^○Masashi Kurosawa^1,2, Noriyuki Taoka¹, Osamu Nakatsuka¹, Hiroshi Ikenoue³, Shigeaki Zaima¹ (Nagoya Univ.¹, JSPS², Kyushu Univ.³)

Keywords:Ge、Sn、laser anneal