The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

15. Crystal Engineering » 15.8 Crystal evaluation, nanoimpurities and crystal defects

[29p-G16-1~21] 15.8 Crystal evaluation, nanoimpurities and crystal defects

Fri. Mar 29, 2013 1:30 PM - 7:15 PM G16 (B5 3F-2304)

[29p-G16-4] Comparison of the formation energy of uncharged intrinsic point defects in Si and Ge

○Eiji Kamiyama1, Koji Sueoka1 (Okayama Pref. Univ.1)

Keywords:Silicon、Germanium、Point Defect