[29p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[29p-G19-13] Effects of high-temperature annealing and hydrogen impurity on operation of In-Ga-Zn-O TFT

Yuichiro Hanyu¹, Katsumi Abe¹, Kay Domen¹, Kenji Nomura¹, ^○Toshio Kamiya¹, Hideo Hosono¹ (Tokyo Tech¹)

Keywords:アモルファス酸化物半導体、薄膜トランジスタ、水素不純物