[29p-PB1-13] Examination of initial surface-residual-oxides on the interface property of InGaAs/ALD-Al2O3
Keywords:InGaAs、Al2O3、自然酸化膜
Regular sessions(Poster presentation)
13. Semiconductors A (Silicon) » 13.3 Insulator technology
Fri. Mar 29, 2013 1:30 PM - 3:30 PM PB1 (2nd gymnasium)
Keywords:InGaAs、Al2O3、自然酸化膜