The 60th JSAP Spring Meeting,2013

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Regular sessions(Poster presentation)

13. Semiconductors A (Silicon) » 13.7 Simulation

[29p-PB3-1~6] 13.7 Simulation

Fri. Mar 29, 2013 1:30 PM - 3:30 PM PB3 (2nd gymnasium)

[29p-PB3-5] Analysis of breakdown voltage for self-biased channel diode by deep boron ion implantation

○Daisuke Yamada1, Tsugutomo Kudoh1, Fumihiko Sugawara2 (Kanagawa Institute of Tech.1, Tohoku Gakuin Univ.2)

Keywords:MOS diode、パワーデバイス、耐圧