[29p-PB3-1~6] 13.7 Simulation

[29p-PB3-6] Effect of dislocation accumulation in STI type ULSI cells on their electric characteristics(2)

^○（M1）Kenta Shimada¹, Yasuhiro Shiraki¹, Takuya Maruizumi¹, Koichi Hayakawa¹, Yosuke Takahashi², Mitsuhiro Sato², Ken Yamaguchi³ (Tokyo City Univ.¹, Kitami Institute of Tech.², Advance Soft³)

Keywords:半導体、転位、シミュレーション