Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Nanocarbon Technology

[18p-A12-1~16] Nanocarbon Technology

Thu. Sep 18, 2014 1:15 PM - 5:30 PM A12 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45～13:15 (11:45 AM - 1:15 PM)

1:15 PM - 1:30 PM

[18p-A12-1] [Young Scientist Oral Presentation Award Speech]（15min.）
Development of biosensors based on a ZnO solution-gate field-effect transistor

^○Takayuki Onaka¹, Ken Iketani¹, Kazuto Koike¹, Yuichi Hirofuji¹, Toshihiko Maemoto¹, Shigehiko Sasa¹, Mitsuaki Yano¹ (Osaka Inst. of Tech., NMRC¹)

1:30 PM - 1:45 PM

[18p-A12-2] The crystallinity of nano-crystalline IGZO thin films

^○Yoichi Kurosawa¹, Yusuke Nonaka¹, Noritaka Ishihara¹, Masashi Oota¹, Yoshinori Yamada¹, Shinya Nishino¹, Shunpei Yamazaki¹ (SEL¹)

1:45 PM - 2:00 PM

[18p-A12-3] Dependence of crystallinity of IGZO thin films on deposition conditions

^○Yoshinori Yamada¹, Akihisa Shimomura¹, Yusuke Nonaka¹, Noritaka Ishihara¹, Shunpei Yamazaki¹ (SEL¹)

2:00 PM - 2:15 PM

△ [18p-A12-4] Effects of Sintering Temperature and Time on Properties of Spin-coated IGZO Thin-films

^○Dongjing Chen¹, Takaaki Morimoto¹, Nobuko Fukuda³, Yoshimichi Ohki^1,2 (Waseda Univ.¹, RIMST², FELC, AIST³)

2:15 PM - 2:30 PM

[18p-A12-5] High-speed and low temperature annealing for fabrication oxide semiconductor thin film transistors

^○(PC)Heajeong Cheong¹, Shintaro Ogura¹, Heisuke Sakai¹, Manabu Yoshida¹, Hirobumi Ushijima¹, Sei Uemura¹, Nobuko Fukuda¹ (AIST,FLEC¹)

2:30 PM - 2:45 PM

▼ [18p-A12-6] Suppression of hump effect in a-InGaZnO thin-film transistors passivated by novel photosensitive passivation layer

^〇(DC)Juan Paolo Bermundo¹, Yasuaki Ishikawa¹, Haruka Yamazaki¹, Kulchaisit Chaiyanan¹, Mami Fujii¹, Toshiaki Nonaka², Yukiharu Uraoka¹ (NAIST¹, AZ Electronic Materials²)

2:45 PM - 3:00 PM

[18p-A12-7] Improvement of uniformity of IGZO TFT characteristics for large sputtering cathode

^○Tatsunori Isobe¹, Makoto Arai¹, Junya Kiyota¹, Kazuya Saito¹ (ULVAC,Inc.¹)

3:00 PM - 3:15 PM

[18p-A12-8] Evaluation of a-IGZO TFTs fabricated with low-temperature-annealed process

^○Yasuyuki Takanashi¹, Mototaka Ochi¹, Hiroshi Goto¹, Toshihiro Kugimiya¹ (Kobe Steel, LTD.¹)

Break 15:15～15:30 (3:15 PM - 3:30 PM)

3:30 PM - 3:45 PM

[18p-A12-9] Modification of a-InGaZnO/SiOx Interface by Self-Assembly Monolayer

^○(DC)Tatsuya Toda¹, Daichi Koretomo¹, Mamoru Furuta¹ (Kochi Univ. of Tech.¹)

3:45 PM - 4:00 PM

[18p-A12-10] Stability in solution-processed InZnO FETs

^○Jun Okada¹, Takashi Nagase^1,2, Takashi Kobayashi^1,2, Hiroyoshi Naito^1,2 (Osaka Pref. Univ¹, RIMED²)

4:00 PM - 4:15 PM

[18p-A12-11] a-InGaZnO TFT pH sensors utilizing top-gate effects (1)

^○Kazushige Takechi¹, Hiroshi Tanabe¹, Shinnosuke Iwamatsu², Toru Yahagi², Yutaka Abe², Seiya Kobayashi² (NLT Technologies, Ltd.¹, Yamagata Research Institute of Technology²)

4:15 PM - 4:30 PM

[18p-A12-12] a-InGaZnO TFT pH sensors utilizing top-gate effects (2)

^○Kazushige Takechi¹, Hiroshi Tanabe¹, Shinnosuke Iwamatsu², Toru Yahagi², Yutaka Abe², Seiya Kobayashi² (NLT Technologies, Ltd.¹, Yamagata Research Institute of Technology²)

4:30 PM - 4:45 PM

[18p-A12-13] a-InGaZnO TFT pH sensors utilizing top-gate effects (3)

^○Shinnosuke Iwamatsu¹, Kazushige Takechi², Yutaka Abe¹, Toru Yahagi¹, Hiroshi Tanabe², Seiya Kobayashi¹ (Yamagata Res. Inst. of Technol.¹, NLT Technologies²)

4:45 PM - 5:00 PM

△ [18p-A12-14] Transparent ZnO Thin-Film Transistors using conducting AZO films

^○Yi Sun¹, Toshihiko Maemoto¹, Shigehiko Sasa¹ (NMRC, Osaka Inst. of Tech.¹)

5:00 PM - 5:15 PM

[18p-A12-15] Low-temperature Processable Amorphous InWO Thin-film Transistors with High Mobility and Electrical Stability

^○(PC)Takio Kizu¹, Shinya Aikawa¹, Nobuhiko Mitoma¹, Maki Shimizu¹, Xu Gao¹, Meng-Fang Lin¹, Toshihide Nabatame¹, Kazuhito Tsukagoshi¹ (NIMS¹)

5:15 PM - 5:30 PM

△ [18p-A12-16] Silicon incorporated metal oxide thin film transistors (SiM-OxTFT)

^○(PC)Nobuhiko Mitoma¹, Shinya Aikawa¹, Xu Gao¹, Takio Kizu¹, Maki Shimizu¹, Meng-Fang Lin¹, Toshihide Nabatame¹, Kazuhito Tsukagoshi¹ (NIMS WPI-MANA¹)