一般セッション(口頭講演)

[18a-A15-1~7] 13.5 Si-English Session

2014年9月18日(木) 10:30 〜 12:15 A15 (E306)

△：奨励賞エントリー
▲：英語発表
▼：奨励賞エントリーかつ英語発表
空欄：どちらもなし

+全てマイスケジュールに登録

10:30 〜 10:45

▲ [18a-A15-1] Impact of Doping Concentration Regimes on Low-Temperature Tunneling in Nanoscale SOI-FETs

^〇（P）Daniel Moraru¹，Yuuki Takasu¹，Takahiro Tsutaya¹，Arup Samanta¹，Le The Anh²，Muruganathan Manoharan²，Takeshi Mizuno¹，Hiroshi Mizuta^2,3，Michiharu Tabe¹ (Shizuoka Univ.¹，JAIST²，Univ. of Southampton³)

10:45 〜 11:00

▲ [18a-A15-2] Effect of Dopants in Tunnel Barriers of Selectively Doped SOI-FETs

^〇Arup Samanta¹，Daniel Moraru¹，Takahiro Tsutaya¹，Le The Anh²，Muruganatha Manoharan²，Takeshi Mizuno¹，Hiroshi Mizuta^2,3，Michiharu Tabe¹ (SU¹，JAIST²，Unv. of Southampton³)

11:00 〜 11:15

▲ [18a-A15-3] KPFM Imaging of Donor Clusters in Selectively-Doped SOI-FET

^〇Krzysztof Tyszka^1,2，Daniel Moraru¹，Takeshi Mizuno¹，Ryszard Jablonski²，Michiharu Tabe¹ (Shizuoka Univ.¹，Warsaw Univ. of Tech.²)

11:15 〜 11:30

▲ [18a-A15-4] Interband Tunneling through Individual Dopants in Nanoscale pn Junctions

^○(M1)Nhat Tan Hoang¹, Purwiyanti Sri^1,2, Daniel Moraru¹, Anh Le³, Muruganathan Manoharan³, Takeshi Mizuno¹, Hiroshi Mizuta^3,4, Hartanto Djoko², Michiharu Tabe¹ (Shizuoka Univ.¹, U.I², JAIST³, Univ. of Southampton⁴)

11:30 〜 11:45

▲ [18a-A15-5] Epitaxial formation and electrical property of Ni Germanide/Ge contacts

^○Yunsheng DENG¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹)

11:45 〜 12:00

▲ [18a-A15-6] Dependence of dielectric constants, leakage currents, and ferroelectric hystereses on Hf_0.5Zr_0.5O₂ thicknesses in MIM Capacitors

^○Shinji Migita¹, Hiroyuki Ota¹, Yukinori Morita¹, Meishoku Masahara¹ (AIST¹)

12:00 〜 12:15

▲ [18a-A15-7] Thermal Decomposition Reaction Mechanism of Ultrathin Oxide on Si(111)

^○(D)Jiayi Tang¹, Shuichi Ogawa¹, Akitaka Yoshigoe², Kiwamu Nishimoto¹, Shinnji Ishidzuka³, Yuden Teraoka², Yuji Takakuwa¹ (Tohoku Univ.¹, JAEA², Nagaoka Univ. Tech.³)

セッション一覧

13．半導体A（シリコン） » 13.5 Si-English Session

[18a-A15-1~7] 13.5 Si-English Session

▲ [18a-A15-1] Impact of Doping Concentration Regimes on Low-Temperature Tunneling in Nanoscale SOI-FETs

▲ [18a-A15-2] Effect of Dopants in Tunnel Barriers of Selectively Doped SOI-FETs

▲ [18a-A15-3] KPFM Imaging of Donor Clusters in Selectively-Doped SOI-FET

▲ [18a-A15-4] Interband Tunneling through Individual Dopants in Nanoscale pn Junctions

▲ [18a-A15-5] Epitaxial formation and electrical property of Ni Germanide/Ge contacts

▲ [18a-A15-6] Dependence of dielectric constants, leakage currents, and ferroelectric hystereses on Hf_0.5Zr_0.5O₂ thicknesses in MIM Capacitors

▲ [18a-A15-7] Thermal Decomposition Reaction Mechanism of Ultrathin Oxide on Si(111)

セッション一覧

13．半導体A（シリコン） » 13.5 Si-English Session

[18a-A15-1~7] 13.5 Si-English Session

▲ [18a-A15-1] Impact of Doping Concentration Regimes on Low-Temperature Tunneling in Nanoscale SOI-FETs

▲ [18a-A15-2] Effect of Dopants in Tunnel Barriers of Selectively Doped SOI-FETs

▲ [18a-A15-3] KPFM Imaging of Donor Clusters in Selectively-Doped SOI-FET

▲ [18a-A15-4] Interband Tunneling through Individual Dopants in Nanoscale pn Junctions

▲ [18a-A15-5] Epitaxial formation and electrical property of Ni Germanide/Ge contacts

▲ [18a-A15-6] Dependence of dielectric constants, leakage currents, and ferroelectric hystereses on Hf0.5Zr0.5O2 thicknesses in MIM Capacitors

▲ [18a-A15-7] Thermal Decomposition Reaction Mechanism of Ultrathin Oxide on Si(111)

▲ [18a-A15-6] Dependence of dielectric constants, leakage currents, and ferroelectric hystereses on Hf_0.5Zr_0.5O₂ thicknesses in MIM Capacitors