Symposium

[19a-C5-1~10] Materials Science of Singularity in Nitride semiconductors～Characterization and Crystallography～

Fri. Sep 19, 2014 8:30 AM - 11:45 AM C5 (Open Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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8:30 AM - 9:00 AM

[19a-C5-1] Assessment and control of recombination mechanism in nitride-based semiconductors

^○Yoichi Kawakami¹, Mitsuru Funato¹, Ryota Ishii¹ (Kyoto Univ.¹)

9:00 AM - 9:15 AM

[19a-C5-2] Multi-peak emission characteristics from InGaN/GaN MQW on m-plane substrate

^○Kaori Kurihara¹, Satoru Nagao¹, Atsushi Yamaguchi² (Mitsubishi Chemical Corp.¹, Kanazawa Inst. Tech.²)

9:15 AM - 9:30 AM

△ [19a-C5-3] Effects of Alloy Compositional on Optical Polarization Properties in Nompolar-InGaN QWs

^○Shigeta Sakai¹, Atsushi Yamaguchi¹, Kurihara Kaori², Satoru Nagao² (Kanazawa Inst. of Tech.¹, Mitsubishi Chemical²)

9:30 AM - 9:45 AM

[19a-C5-4] Photonic Crystal Effect in Regularly Arranged Nanocolumn LEDs

^○Daijiro Shiba¹, Ai Yanagihara¹, Syunsuke Ishizawa¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotech. Research Center²)

9:45 AM - 10:00 AM

[19a-C5-5] Fabrication and evaluation of InGaN-based light-emitting diodes using localized surface plasmon

^○Tetsuro Tsukaa¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Koichi Okamoto², Kazutaka Tateishi² (Yamaguchi Univ¹, Kyushu Univ²)

Break 10:00～10:15 （10:00 AM - 10:15 AM）

10:15 AM - 10:45 AM

[19a-C5-6] A femtosecond pulsed electron beam for characterizing wide bandgap semiconductors

^○Shigefusa Chichibu¹, Youichi Ishikawa¹, Yoshiki Yamazaki¹, Kazunobu Kojima¹ (Tohoku Univ.¹)

10:45 AM - 11:00 AM

[19a-C5-7] Observation of exciton fine-structure splittings in GaN/AlGaN interface-fluctuation quantum dots

^○Munetaka Arita¹, Taichi Iki², Satoshi Kako², Yasuhiko Arakawa^1,2 (NanoQuine, Univ. of Tokyo¹, IIS, Univ. of Tokyo²)

11:00 AM - 11:15 AM

△ [19a-C5-8] Removing GaN substrate from Near-UV LEDs by laser lift-off technique

^○Daisuke Iida¹, Syunsuke Kawai¹, Takayoshi Tsuchiya¹, Nobuaki Ema¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (Fac. Sci. & Technol., Meijo Univ.¹, Akasaki Inst. Nagoya Univ.²)

11:15 AM - 11:30 AM

[19a-C5-9] Fabrication of UV Light-emitting Diodes containing a p-AlGaN contacting layer with high Al content

^○Masafumi Jo¹, Noritoshi Maeda¹, Hideki Hirayama¹ (RIKEN¹)

11:30 AM - 11:45 AM

△ [19a-C5-10] Effect of carbon addition for liquid phase epitaxy of AlN using Ga-Al flux

^○Masayoshi Adachi¹, Ryuta Sekiya¹, Masashi Sugiyama², Junji Iida², Hiroyuki Fukuyama¹ (Tohoku Univ.¹, Sumitomo Metal Mining Co. Ltd.²)

Symposium

[19p-C5-1~12] Materials Science of Singularity in Nitride semiconductors～Characterization and Crystallography～

Fri. Sep 19, 2014 1:15 PM - 6:00 PM C5 (Open Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45～13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:45 PM

[19p-C5-1] Studies of the optical response of point defects and electric fields in a crystal singularity by means of positron annihilation

^○Akira Uedono¹, Shouji Ishibashi², Nagayasu Oshima³, Ryoichi Suzuki³, Masatomo Sumiya⁴, Tomas Palacios⁵ (Div. Appl. Phys. Univ. of Tsukuba¹, Nanosystem AIST², Instrumentation Frontier AIST³, NIMS⁴, MIT EECS⁵)

1:45 PM - 2:15 PM

[19p-C5-2] Multi-Scale Characterization of Structural Properties of Singularity in Nitride Semiconductors

^○Akira Sakai¹, Shotaro Takeuchi¹, Yoshiaki Nakamura¹, Hideto Miyake², Kazumasa Hiramatsu², Yasuhiko Imai³, Shigeru Kimura³ (Osaka Univ.¹, Mie Univ.², JASRI/SPring-8³)

2:15 PM - 2:30 PM

[19p-C5-3] Growth of hillock-free N-face GaN (000-1) films by group-III-source flow-rate modulation epitaxy

^○Tetsuya Akasaka¹, ChiaHung Lin¹, Hideki Yamamoto¹ (NTT Corp.¹)

2:30 PM - 2:45 PM

[19p-C5-4] Effect of graphene buffer layers on the growth of group III nitride on amorphous substrates

Joeng Woo Shon¹, Tatsunori Ishii¹, ^○Jitsuo Ohta¹, Atsushi Kobayashi¹, Kohei Ueno¹, Hiroshi Fujioka^1,2 (IIS, The Univ. of Tokyo¹, JST-CREST²)

2:45 PM - 3:00 PM

[19p-C5-5] RF-MBE growth of nitride semiconductors on a-In2O3/Sapphire templates

^○Tsutomu Araki¹, Nao Masuda¹, Tomoki Kobayashi¹, Yasushi Nanishi¹, Masaya Oda², Toshimi Hitora² (Ritsumeikan Univ.¹, ROCA²)

Break 15:00～15:15 （3:00 PM - 3:15 PM）

3:15 PM - 3:45 PM

[19p-C5-6] Many-body effects of excitons in semiconductor alloys

^○Yoichi Yamada¹ (Yamaguchi Univ.¹)

3:45 PM - 4:15 PM

[19p-C5-7] Study of carrier dynamics and crystal singularity by infrared spectroscopy

^○Yoshihiro Ishitani¹, Ken Morita¹, Bei Ma¹ (Chiba University¹)

4:15 PM - 4:30 PM

[19p-C5-8] The origin of an anomalous peak in photoluminescence spectra of AlN II

^○Ryota Ishii¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

4:30 PM - 4:45 PM

△ [19p-C5-9] Observation of the largest biexciton binding energy from GaN nanowire quantum dots

^○Kihyun Choi¹, Mark Holmes¹, Satoshi Kako², Munetaka Arita¹, Yasuhiko Arakawa^1,2 (NanoQuine, Univ. of Tokyo¹, IIS, Univ. of Tokyo²)

Break 16:45～17:00 （4:45 PM - 5:00 PM）

5:00 PM - 5:15 PM

[19p-C5-10] Improved ion-beam-assisted MBE for high-quality cubic BN (111) growth

^○Kazuyuki Hirama¹, Yoshitaka Taniyasu¹, Shin-ichi Karimoto¹, Hideki Yamamoto¹ (NTT BRL¹)

5:15 PM - 5:30 PM

[19p-C5-11] InGaN-based Light Emitting Diodes on (-201) β-Ga2O3 Substrate for Large-current Operation

^○Kazuyuki Iizuka¹, Rikiya Suzuki¹, Yuki Koishikawa¹, Daiki Wakimoto¹, Saori Umemura¹, Ken Goto¹, Yoshikatsu Morishima¹, Akito Kuramata¹, Shigenobu Yamakoshi¹, Ying-Yong Su², Yu-Jiun Shen², Gavin Liu² (TAMURA CORPORATION¹, EPISTAR CORPORATION²)

5:30 PM - 6:00 PM

[19p-C5-12] Controlling nitride semiconductor interfaces and development of electronic devices using nanolaminate peculiar structure

^○Yasuo Koide¹, Masataka Imura¹, Jiangwei Liu¹, Meiyong Liao¹ (NIMS¹)

Sessions

Symposium » Materials Science of Singularity in Nitride semiconductors～Characterization and Crystallography～