Oral presentation

[17p-A28-1~12] 14.5 Compound solar cells

Wed. Sep 17, 2014 2:00 PM - 5:15 PM A28 (N304)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

[17p-A28-1] [Young Scientist Oral Presentation Award Speech]（15min.）
Carrier Time-of-Flight Measurement for Direct Observation of Carrier Dynamics in Quantum Structure Solar Cells

^○Kasidit Toprasertpong¹, Naofumi Kasamatsu³, Hiromasa Fujii¹, Tomoyuki Kada³, Shigeo Asahi³, Yunpeng Wang², Kentaroh Watanabe², Masakazu Sugiyama¹, Takashi Kita³, Yoshiaki Nakano¹ (Univ. of Tokyo¹, RCAST², Kobe Univ.³)

2:15 PM - 2:30 PM

[17p-A28-2] Investigation of Miniband in Strain-Balanced InGaAs/GaAsP Quantum Well Solar Cells by Using a Piezoelectric Photothermal Method

^○(D)taketo aihara¹, takumi murakami¹, hironori kuradome¹, taishi sugimoto¹, hidetoshi suzuki¹, atsuhiko fukuyama¹, masakazu sugiyama², yoshiaki nakano², tetsuo ikari¹ (Univ. of Miyazaki¹, The Univ. of Tokyo²)

2:30 PM - 2:45 PM

△ [17p-A28-3] Multiple exciton generation in colloidal nanocrystal thin films: Surface ligand effects

^○Masashi Ono¹, Taishi Nishihara², Toshiyuki Ihara², Makoto Kikuchi¹, Atsushi Tanaka¹, Masayuki Suzuki¹, Yoshihiko Kanemitsu^2,3 (FUJIFILM¹, ICR, Kyoto Univ.², JST-CREST³)

2:45 PM - 3:00 PM

[17p-A28-4] Multiple exciton generation in colloidal nanocrystal thin films: Multiexciton dynamics and charge separation

^○Taishi Nishihara¹, Masashi Ono², Hirokazu Tahara¹, Yoshihiko Kanemitsu^1,3 (ICR, Kyoto Univ¹, FUJIFILM Corporation, Frontier Core-Technology Laboratories², JST-CREST³)

3:00 PM - 3:15 PM

▼ [17p-A28-5] Analysis of voltage dependence of two-step photocurrent generation in GaAs/AlGaAs quantum dot solar cells using rate equations

^〇Martin Elborg¹, Takeshi Noda¹, Takaaki Mano¹, Kazuaki Sakoda^1,2, Liyuan Han¹ (NIMS¹, Univ. Tsukuba²)

3:15 PM - 3:30 PM

△ [17p-A28-6] The Effect of Si doping in quantum dot solar cells

^○(D)Shunya Naitoh^1,2, Kasidit Toprasertpong¹, Takuya Hoshii^1,2, Masakazu Sugiyama¹, Yoshitaka Okada^1,2 (The Univ. of Tokyo¹, RCAST²)

Break 15:30～15:45 （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

△ [17p-A28-7] Observation of photocurrent increase due to two-step photon absorption process in a single quantum dot for intermediate band solar cell

^○Tomohiro Nozawa^1,2,3, Hiroyuki Takagi^1,2, Katsuyuki Watanabe¹, Yasuhiko Arakawa^1,2 (Nano Quine¹, IIS Univ. of Tokyo², SHARP³)

4:00 PM - 4:15 PM

△ [17p-A28-8] Two-Step Photon Absorption in InGaAs Quantum Dot Solar Cells Varying Barrier Layers

^○Ryo Tamaki¹, Yasushi Shoji¹, Yoshitaka Okada¹, Kenjiro Miyano¹ (RCAST, The Univ. of Tokyo¹)

4:15 PM - 4:30 PM

△ [17p-A28-9] Effect of carrier relaxation to the quantized states in InAs/GaAs quantum dot superlattice solar cell on the two-step photon absorption

^○Tomoyuki Kada¹, Shigeo Asahi¹, Toshiyuki Kaizu¹, Takashi Kita¹, Ryo Tamaki², Yoshitaka Okada², Kenjiro Miyano² (Kobe Univ.¹, RCAST, The Univ. of Tokyo²)

4:30 PM - 4:45 PM

[17p-A28-10] Efficient two-step photon absorption at room temperature by inserting high-potential-barrier layers in intermediate-band solar cells

^○Shigeo Asahi¹, Haruyuki Teranishi¹, Naofumi Kasamatsu¹, Tomoyuki Kada¹, Toshiyuki Kaizu¹, Takashi Kita¹ (Kobe Univ.¹)

4:45 PM - 5:00 PM

[17p-A28-11] Theoretical calculation of sun concentration properties for intermediate-band solar cells using InAs/GaAsSb quantum dots

^○Keisuke Uchida¹, Katsuyoshi Sakamoto¹, Koichi Yamaguchi¹ (Univ. of Electro-Communications¹)

5:00 PM - 5:15 PM

[17p-A28-12] Hot carrier intermediate band solar cells using low-dimensioned quantum structures

^○Daiki Watanabe¹, Naofumi Kasamatsu¹, Yukihiro Harada¹, Takashi Kita¹ (Kobe Univ.¹)

Oral presentation

[18a-A28-1~11] 14.5 Compound solar cells

Thu. Sep 18, 2014 9:30 AM - 12:30 PM A28 (N304)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

[18a-A28-1] Photovoltaic Performance analysis of Concentrating Photovoltaic Using Micro Solar Cells

^○Nobuhiko Hayashi¹, Akio Matsushita¹, Daijiro Inoue¹, Mitsuhiro Matsumoto¹, Takayuki Nagata¹, Hiroshi Higuchi¹, Youichirou Aya¹, Tohru Nakagawa¹ (Panasonic Corp.¹)

9:45 AM - 10:00 AM

[18a-A28-2] Light Trapping in Thin-Film GaAs Solar Cells Using Metal Nanostructures

^○Hidenori Mizuno¹, Yasuo Hozumi², Kikuo Makita², Hitoshi Sai², Hidetaka Takato¹, Koji Matsubara² (AIST FREA¹, AIST RCPVT²)

10:00 AM - 10:15 AM

[18a-A28-3] Light Trapping effect on III-V thin-film solar cells with backside micro-patterning

^○Kentaroh Watanabe¹, Tomoyuki Inoue², Masakazu Sugiyama², Yoshiaki Nakano^1,2 (RCAST, Univ of Tokyo¹, Dept. Eng., Univ of Tokyo²)

10:15 AM - 10:30 AM

[18a-A28-4] The quantification of the luminescence coupling on triple-junction solar cells by the LED bias light method

^○Mitsunobu Sugai¹, Tetsuya Nakamura², Mitsuru Imaizumi² (AES Co., Ltd¹, JAXA²)

10:30 AM - 10:45 AM

[18a-A28-5] Comparison of Radiation Response of Component Subcells in IMM Triple-Junction Solar Cells Irradiated with Electrons and Protons

^○Mitsuru Imaizumi¹, Tetsuya Nakamura¹, Takeshi Ohshima² (JAXA¹, JAEA²)

Break 10:45～11:00 （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

[18a-A28-6] Subcell Characteristic Analysis of 3-Junction InGaP/GaAs/Ge Solar Cells via Absolute Electroluminescence Quantum Efficiency Measurements

^○Masahiro Yoshita¹, Shaoqiang Chen¹, Lin Zhu¹, Toshimitsu Mochizuki¹, Changsu Kim¹, Hidefumi Akiyama¹, Mitsuru Imaizumi², Yoshihiko Kanemitsu³ (ISSP, Univ. of Tokyo¹, JAXA², ICR, Kyoto Univ.³)

11:15 AM - 11:30 AM

▲ [18a-A28-7] Analysis of Internal-luminescence-quantum-yield of Subcells in InGaP/GaAs/Ge triple-junction solar cells and their influence on energy conversion efficiencies

^○Lin Zhu¹, Shaoqiang Chen¹, Masahiro Yochita¹, Toshimitsu Mochizuki¹, Changsu Kim¹, Hidefumi Akiyama¹, Mitsuru Imaizumi², Yoshihiko Kanemitsu³ (ISSP, Univ. of Tokyo¹, JAXA², ICR, Kyoto Univ.³)

11:30 AM - 11:45 AM

▲ [18a-A28-8] High Optical Transmissivity in Stacked Multi-Junction Solar Cell

^○Shunsuke Kimura¹, Shinya Yoshidomi¹, Masahiko Hasumi¹, Shunji Takase², Yasunori Ando², Toshiyuki Sameshima¹ (TUAT¹, NISSIN ELECTRIC²)

11:45 AM - 12:00 PM

▲ [18a-A28-9] Subcell carrier collection efficiencies in multijunction solar cells determined by time-resolved photoluminescence

^○(P)David Tex^1,4, Toshiyuki Ihara¹, Hidefumi Akiyama^2,4, Mitsuru Imaizumi³, Yoshihiko Kanemitsu^1,4 (ICR Kyoto Univ.¹, ISSP Tokyo Univ.², JAXA³, JST-CREST⁴)

12:00 PM - 12:15 PM

[18a-A28-10] Characterization of Triple Junction Solar Cells Using Laser Terahertz Emission Microscope under CW Laser Illumination - CW Laser Wavelength Dependence -

^○Akira Ito¹, Hidetoshi Nakanishi¹, Toshihito Umegaki², Kazuhisa Takayama², Iwao Kawayama², Hironaru Murakami², Masayoshi Tonouchi² (Dainippon Screen Mfg.¹, ILE Osaka Univ.²)

12:15 PM - 12:30 PM

[18a-A28-11] Characteristics of Terahertz Radiation from Triple Junction Solar Cells Excited by Variable Wavelength Laser Pulses

^○Toshihito Umegaki¹, Yuji Sakai¹, Akira Ito², Hidetoshi Nakanishi², Iwao Kawayama¹, Hironaru Murakami¹, Masayoshi Tonouchi¹ (ILE, Osaka Univ.¹, Dainippon Screen Mfg.²)

Oral presentation

[18p-A28-1~16] 14.5 Compound solar cells

Thu. Sep 18, 2014 2:00 PM - 6:15 PM A28 (N304)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:30～14:00 （12:30 PM - 2:00 PM）

2:00 PM - 2:15 PM

[18p-A28-1] Fabrication of sulfide thin film for solar cell application by Mist CVD method

^○Ryosuke Takakgi¹, Kenji Shibayama¹, Kentaro Kaneko¹, Shizuo Fujita¹ (Dept. Electron. Sci. and Eng.,Kyoto Univ.¹)

2:15 PM - 2:30 PM

△ [18p-A28-2] Precursor Solution Dependence on Bandgap of FeS2 Films

^○Takahiro Doe¹, Yasuaki Ishikawa¹, Shunsuke Uchiyama¹, Masahiro Horita¹, Yukiharu Uraoka¹ (NAIST¹)

2:30 PM - 2:45 PM

[18p-A28-3] Fabrication of SnS thin film by the light-assisted electrochemical deposition method and application to CdS/SnS heterojunction cells

^○(M2)Yoshikazu Tanaka¹, Masaya Ichimura¹ (Nagoya Inst. of Tech.¹)

2:45 PM - 3:00 PM

△ [18p-A28-4] Fabrication of Cu₂ZnSnS₄ thin films by mist CVD method and effects of mist sulfurization method

^○Takumi Ikenoue¹, Yuichiro Watanabe¹, Masao Miyake¹, Tetsuji Hirato¹ (Kyoto Univ.¹)

3:00 PM - 3:15 PM

[18p-A28-5] Effects of Ammonia Solution Treatment of CZTS Thin Film Surface

^○Hisashi Miyazaki¹, Masami Aono¹, Hiroaki Kishimura¹, Hironori Katagiri² (Natl. Def. Acad.¹, Nagaoka Nat. College of Tech.²)

3:15 PM - 3:30 PM

[18p-A28-6] Effects of Annealing under Sulfur Atmosphere on Spray-Coated Cu₂ZnSn(S,Se)₄ Thin Films

^○(M1)Kanta Sugimoto¹, Jun Kuwana¹, Masanori Goto¹, Naoki Suyama¹, Yiwen Zhang², Yasuyoshi Kurokawa¹, Akira Yamada^1,3 (Dept. Physical Electronics, Tokyo Tech.¹, Technical Research Institute, Toppan Printing Co. Ltd², Photovoltaics Research Center, Tokyo Tech.³)

3:30 PM - 3:45 PM

[18p-A28-7] Cu₂ZnSn(S,Se)₄ Thin-Film Solar Cells Prepared by Two-Step Annealing

^○Masanori Goto¹, Jyun Kuwana¹, Kanta Sugimoto¹, Naoki Suyama¹, Yiwen Zhang², Yasuyoshi Kurokawa¹, Akira Yamada^1,3 (Department of Physical Electronics, Tokyo Tech.¹, Technical Research Institute, Toppan Printing Co. Ltd.², Photovoltaics Research Center, Tokyo Tech.³)

3:45 PM - 4:00 PM

[18p-A28-8] Direct Growth of Photovoltaic Grade CZTS Thin Films by Multi-stage Co-evaporation

^○Takahiro Mise¹, Shin Tajima¹, Tatsuo Fukano¹, Kazuo Higuchi¹, Tsukasa Washio², Kazuo Jimbo², Hironori Katagiri² (Toyota CRDL¹, Nagaoka NCT²)

Break 16:00～16:15 （4:00 PM - 4:15 PM）

4:15 PM - 4:30 PM

▲ [18p-A28-9] Free carrier dynamics in Cu₂ZnSnS₄ single crystals investigated by optical pump - THz probe spectroscopy

^〇Phuong Le Quang^1,2, Okano Makoto¹, Yamashita Genki³, Morimoto Tomohide³, Yamada Yasuhiro¹, Nagaoka Akira^1,4, Yoshino Kenji⁴, Nagai Masaya³, Ashida Masaaki³, Kanemitsu Yoshihiko^1,2 (Kyoto University¹, JST-CREST², Osaka University³, University of Miyazaki⁴)

4:30 PM - 4:45 PM

[18p-A28-10] Effect of Water Spray Treatment on the Band Structure of CdS/Cu₂ZnSnS₄ Junction

^○Ryosuke Fujimura¹, Yoshio Hashimoto¹, Than Htay Myo¹, Noritaka Momose² (Shinshu Univ.¹, NNCT²)

4:45 PM - 5:00 PM

▲ [18p-A28-11] The investigation of Ge substitution effects in Cu₂ZnSnSe₄ Thin film solar cells

^〇Kim Shinho, Kim Kang Min, Tampo Hitoshi, Shibata Hajime, Niki Shigeru (RCPVT, AIST)

5:00 PM - 5:15 PM

[18p-A28-12] Characterization of Interface in Wide-gap ZnCuGaSe₂ Solar Cells

^○Teruaki Yamamoto¹, Takayuki Negami¹, Koji Matsubara², Shigeru Niki² (Panasonic¹, AIST²)

5:15 PM - 5:30 PM

[18p-A28-13] Growth and Characterization of Ge substituted Cu2SnSe3 thin film solar cells

^○Kang Min Kim¹, Shinho Kim¹, Hitoshi Tampo¹, Hajime Shibata¹, Shigeru Niki¹ (AIST RCPVT¹)

5:30 PM - 5:45 PM

[18p-A28-14] Photocarrier recombination dynamics in Perovskite CH₃NH₃PbI₃ single crystal revealed by white-light pump-probe transient reflection spectroscopy

^○Takumi Yamada¹, Yasuhiro Yamada¹, Hidetaka Nishimura¹, Atsushi Wakamiya¹, Yoshihiko Kanemitsu¹ (Kyoto Univ.¹)

5:45 PM - 6:00 PM

[18p-A28-15] Photocarrier recombination dynamics in lead-halide perovskite CH₃NH₃PbI₃ thin films for solar cell application

^○Yasuhiro Yamada¹, Masaru Endo¹, Atsushi Wakamiya¹, Yoshihiko Kanemitsu^1,2 (Kyoto Univ.¹, JST-CREST²)

6:00 PM - 6:15 PM

[18p-A28-16] Room-temperature annealing effect in perovskite CH₃NH₃PbI₃ based solar cell and the correlation with photoluminescence dynamics

^○Yasuhiro Yamada¹, Masaru Endo¹, Atsushi Wakamiya¹, Yoshihiko Kanemitsu^1,2 (Kyoto Univ.¹, JST-CREST²)

Oral presentation

[19a-A28-1~13] 14.5 Compound solar cells

Fri. Sep 19, 2014 9:00 AM - 12:30 PM A28 (N304)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[19a-A28-1] In-situ optical monitoring of the CIGS film growth process(Ⅲ)

^○Yuma Kitamura¹, Toshihiro Takahashi¹, Shinji Yudate¹, Akira Miyata¹, Sho Shirakata¹ (Ehime Univ.¹)

9:15 AM - 9:30 AM

[19a-A28-2] Characterization of the CIGS thin films by photoluminescence

^○takayuki kishida¹, syohgo yoshida¹, shinzhi yudate¹, akira miyata¹, syo shirakata¹ (Grad.School Sci.& Eng.Ehime Univ¹)

9:30 AM - 9:45 AM

▲ [19a-A28-3] Investigation on Non-radiative Recombination in CIGS Solar Cells through PT-AFM under Various Incident Light Conditions

^〇Warithapol Srivises¹, Takashi Minemoto³, Takuji Takahashi^1,2 (IIS, the University of Tokyo¹, INQIE², Coll. of Sci. and Eng., Ritsumeikan Univ.³)

9:45 AM - 10:00 AM

[19a-A28-4] Characterization of surface potential and capacitance on CIGS solar cells by Kelvin probe force microscopy

^○Tomoaki Ishii¹, Takashi Minemoto³, Takuji Takahashi^1,2 (IIS, The Univ. of Tokyo¹, INQIE, The Univ. of Tokyo², Coll. of Sci. and Eng., Ritsumeikan Univ.³)

10:00 AM - 10:15 AM

[19a-A28-5] Photo-carrier recombination processes studied by P-KFM on CIGS solar cells with various Ga contents

^○Hyeondeuk Yong¹, Takashi Minemoto³, Takuji Takahashi^1,2 (IIS, The Univ. of Tokyo¹, INQIE, The Univ. of Tokyo², Coll. of Sci. and Eng., Ritsumeikan Univ.³)

10:15 AM - 10:30 AM

[19a-A28-6] Study of Electronic Structure of CIGS and CdS/CIGS on Polymer Substrate by in-situ PES/IPES

^○Takayuki Fukuyama¹, Syo Yoshimoto¹, Kosuke Chochi¹, Kazunari Sasaki¹, Yuki Suwahara¹, Masahiro Mitsunaga¹, Hajime Shibata², Koji Matsubara², Shigeru Niki², Norio Terada^1,2 (Kagoshima Univ.¹, AIST²)

Break 10:30～10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[19a-A28-7] High Temperature Groth of Suptter-Deposited Mo thin Films for CIGS Solar Cells

^○Teramoto Masahiro¹, Taisuke Seishu¹, Hiroshi Fukai², Jehl Zacharie², Mutsumi Sugiyama¹, Tokio Nakada² (TUS¹, RIST²)

11:00 AM - 11:15 AM

[19a-A28-8] High Temperature Growth of Wide-Gap CIGS Thin Films

Yuya Nakakoba¹, ^○hirofumi Fukai², Jehl Li Kao Zacharie², Tokio Nakada² (Aoyama Univ.¹, Tokyo Univ. of Sci.²)

11:15 AM - 11:30 AM

△ [19a-A28-9] Suppression of Recombination at a CdS/CIGS Interface by Inserting Cu(In,Ga)₃Se₅ for Cu(In,Ga)Se₂ Solar cells

^○(M2)Takahito Nishimura¹, Yoshiaki Hirai¹, Yasuyoshi Kurokawa¹, Akira Yamada^1,2 (Dept. Physical Electronics, Tokyo Tech¹, Photovoltaics Research Center(PVREC)²)

11:30 AM - 11:45 AM

[19a-A28-10] Flexible CIGS Solar Cells Fabricated on Polyimide-coated Soda-lime Glass

^○(M2)Adiyudha Sadono¹, Masashi Hino³, Mitsuru Ichikawa³, Kenji Yamamoto³, Yasuyoshi Kurokawa¹, Makoto Konagai^1,2, Akira Yamada^1,2 (Dept. of Physical Electronics, Tokyo Tech¹, Photovoltaics Research Center (PVREC), Tokyo Tech², Kaneka Corporation³)

11:45 AM - 12:00 PM

▲ [19a-A28-11] Effect of Surface Sulfurization on MBE-Grown Cu(In_1-x,Ga_x)Se₂ Thin Film

^〇Ishwor Khatri, Isamu Matsuyama, Hiroshi Yamaguchi, Tokio Nakada (Research Institute for Science and Technology, Tokyo University of Science)

12:00 PM - 12:15 PM

[19a-A28-12] Photovoltaic properties of Cu(In,Ga)Se2 solar cells with transparent amorphous oxide semiconducting buffer layers

^○Takashi Koida¹, Hideki Takahashi¹, Yukiko Kamikawa¹, Akimasa Yamada¹, Hajime Shibata¹, Shigeru Niki¹ (AIST¹)

12:15 PM - 12:30 PM

[19a-A28-13] Growth of InSe/Mo and In₂Se₃/Mo films by using molecular beam epitaxy.

^○Yoshihiro Ichinohe¹, Masaki Yagami¹, Kenji Misawa¹ (Hokkaido Univ. of Sci.¹)

Poster presentation

[19p-PB3-1~27] 14.5 Compound solar cells

Fri. Sep 19, 2014 1:30 PM - 3:30 PM PB3 (Gymnasium2)

ポスター掲示時間13:30～15:30(PB3会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[19p-PB3-1] Effects of a surface barrier layer in AlGaAs/GaAs solar cells

^○Hiroyuki Urabe^1,2, Makoto Kuramoto^1,2, Tomohiro Nakano^1,2, Atsushi Kawaharazuka², Toshiki Makimoto¹, Yoshiji Horikoshi² (Waseda Univ.¹, JST-CREST²)

1:30 PM - 3:30 PM

[19p-PB3-2] Outdoor measurements of spectral-splitting photovoltaic system using GaAs and InGaP solar cells

^○Aikyo Hosono¹, Soma Ishii¹, Yohei Ogawa¹, Yuya Masuda², Tamotsu Okamoto¹, Yuzuru Ueda³, Makoto Konagai² (Kisarazu Nat.Coll.Tech.¹, Tokyo Inst.Tech.², Tokyo Univ. Science³)

1:30 PM - 3:30 PM

[19p-PB3-3] High efficiency solar cells using spectrum-splitting technique

^○Yuki Takiguchi¹, Yutaro Takei², Yuya Masuda¹, Porponth Sichanugrist¹, Zacharie Jehl³, Tokio Nakada³, Makoto Konagai^1,4 (Dept. of Physical Electronics, Tokyo Tech.¹, Dept. of Electrical & Electronic Engineering, Tokyo Tech.², RIST, Tokyo Univ. of Science³, PVREC, Tokyo Tech.⁴)

1:30 PM - 3:30 PM

[19p-PB3-4] InGaP/GaAs/Si tandem cells using direct bonding of dissimilar materials

^○Naoteru Shigekawa¹, Li Chai¹, Masashi Morimoto¹, Jianbo Liang¹, Ryusuke Onitsuka², Takaaki Agui², Hiroyuki Juso², Tatsuya Takamoto² (Osaka City Univ.¹, Sharp Co.²)

1:30 PM - 3:30 PM

[19p-PB3-5] Evaluation of conversion efficiency for multi-junction solar cell with luminescent coupling

^○(P)Akio Ogura¹, Tomah Sogabe¹, Yoshitaka Okada¹ (University of Tokyo¹)

1:30 PM - 3:30 PM

[19p-PB3-6] Analysis of GaAs/AlGaAs quantum nanodisk solar cell with intermediate band carrier transportation

^○(P)Akio Ogura¹, Tomah Sogabe¹, Yoshitaka Okada¹ (University of Tokyo¹)

1:30 PM - 3:30 PM

[19p-PB3-7] Effect of Field Damping Layer on InAs/AlGaAs Quantum Dots Solar Cells

^○Yasushi Shoji¹, Ryo Tamaki¹, Alejandro Datas², Antonio Martí², Antonio Luque², Yoshitaka Okada¹ (RCAST, The Univ. of Tokyo¹, UPM²)

1:30 PM - 3:30 PM

[19p-PB3-8] Effects of Barrier Thickness in Al_xGa_1-xAs/GaAs Superlattice Solar Cells

^○Makoto Kuramoto^1,2, Hiroyuki Urabe^1,2, Tomohiro Nakano^1,2, Atsushi Kawaharazuka^1,2, Jiro Nishinaga^1,2, Toshiki Makimoto¹, Yoshiji Horikoshi^1,2 (Waseda Univ.¹, JST-CREST²)

1:30 PM - 3:30 PM

[19p-PB3-9] Analysis of shape dependence of optical absorption characteristics in coupled quantum dots arrays

^○Youhei Mutou¹, Kenji Sasaoka¹, Satofumi Souma¹, Matsuto Ogawa¹ (Kobe Univ.¹)

1:30 PM - 3:30 PM

[19p-PB3-10] MBE Growth of GaAs:N δ-Doped Superlattices for Intermediate Band Solar Cells

^○Tomoya Suzuki¹, Kazuki Osada¹, Shuhei Yagi¹, Shunya Naito², Yasuto Hijikata¹, Yoshitaka Okada², Hiroyuki Yaguchi¹ (Saitama Univ.¹, RCAST, The Univ. of Tokyo²)

1:30 PM - 3:30 PM

[19p-PB3-11] Preparation and characterization of FeSe films by electrodeposition.

^○Tomonori Nagaya¹, Makoto Takahashi¹, Takaya Suzuki¹, Masahiro Tahashi¹ (Chubu Univ.¹)

1:30 PM - 3:30 PM

[19p-PB3-12] Investigation of Band Alignment at n-type-semiconductor/p-Cu₂SnS₃ Heterointerfaces

Soichi Sato¹, ^○Hiroki Sumi¹, Guannan Shi¹, Mutsumi Sugiyama¹ (Faculty of Sci. and Tech / RIST,Tokyo Univ. of Science¹)

1:30 PM - 3:30 PM

[19p-PB3-13] TG/DTA of Sulfurization Process in CZTS Precursors

^○(PC)Tsukasa Washio^1,2, Kazuo Jimbo¹, Hironori Katagiri^1,2 (Nagaoka National College of Technology¹, JST-CREST²)

1:30 PM - 3:30 PM

[19p-PB3-14] Cu₂ZnSnS₄ polycrystal growth by the solid phase method

^○Yusuke Watanabe¹, Hiroki Miura¹, Yong-Gu Shim², Kazuki Wakita¹ (Chiba Inst. of Tech.¹, Osaka Pref. Univ.²)

1:30 PM - 3:30 PM

[19p-PB3-15] Preparation of Cu₂ZnSnSe₄ thin films by selenization of compound precursor II

Mitsuki Nakashima¹, Shohei Yukawa¹, Kengo Kusumoto¹, ^○Toshiyuki Yamaguchi¹ (NIT, Wakayama Coll.¹)

1:30 PM - 3:30 PM

[19p-PB3-16] Growth of Cu₂ZnSn(S_x,Se_1-x)₄ single crystal by traveling heater method

^○Akira Nagaoka^1,4, Kenji Yoshino², Hideto Miyake³, Yoshitaro Nose¹ (Kyoto Univ.¹, Miyazaki Univ.², Mie Univ.³, JSPS Research Fellow⁴)

1:30 PM - 3:30 PM

[19p-PB3-17] Structure and optical properties of CdS:O thin films by cathode sputtering

^○Masahiro Nakajima¹, Ryo Asaba¹, Akinori Suzuki¹, Yong-Gu Shim², Khuraman Khalilova³, Nazim Mamedov³, Ayaz Bayramov³, Emil Huseynov³, Kazuki Wakita¹ (Chiba Inst. of Tech.¹, Osaka Pref. Univ.², Azerbaijan Inst. of Phys.³)

1:30 PM - 3:30 PM

[19p-PB3-18] Photoluminescence properties of SnS thin film as a function of sulfurization condition

^○Shuntaro Mikami¹, Takashi Hiramatsu¹, Mutsumi Sugiyama¹ (Faculty of Sci. and Tech. / RIST, Tokyo Univ. of Science¹)

1:30 PM - 3:30 PM

[19p-PB3-19] Investigation of amorphous Zn-Sn-O buffer layer by RF sputtering for Cd-free CIGS and SnS solar cells

Shao-Wei Chang¹, Yuukou Murakami¹, ^○Hiroshi Nakai¹, Mutsumi Sugiyama¹ (Faculty of Science and Technology/RIST, Tokyo Univ. of Science¹)

1:30 PM - 3:30 PM

[19p-PB3-20] Characterization of Several Chalcogenide Thin Films Using Electrochemical Techniques

^○Shigeru Ikeda¹, Wilman Septina¹, Yoshihito Kawasaki¹, Takashi Minemoto², Yoshitaro Nose³, Michio Matsumura¹ (Osaka Univ.¹, Ritsumeikan Univ.², Kyoto Univ.³)

1:30 PM - 3:30 PM

[19p-PB3-21] Investigation of Defect around Interfaces of CIGS Solar Cells by Proton Irradiation using Electrochemical Impedance Spectroscopy

Hidenori Sakakura¹, Yosinori Kondo¹, ^○Tsubasa Yokoi¹, Masayuki Itagaki¹, Mutsumi Sugiyama¹ (Faculty of Science and Technology/RIST,Tokyo Univ. of Science¹)

1:30 PM - 3:30 PM

[19p-PB3-22] Preparation of CIGS thin film solar cells and Zn-doping

^○Shogo Yoshida¹, Takashi Kishida¹, Shinji Yudate¹, Akira Miyata¹, Sho Shirakata¹ (Grad.School Sci.& Eng.Ehime Univ.¹)

1:30 PM - 3:30 PM

[19p-PB3-23] Low temperature growth of ZnO thin films by spray pyrolysis for Cu(In,Ga)Se₂ solar cells

^○(M1)Kenta Hamachi¹, Himeka Tominaga¹, Akiko Mochihara¹, Kenji Yoshino¹, Takashi Minemoto², Jiang Feng³, Shigeru Ikeda³ (Miyazaki University¹, Ritumeikan University², Osaka University³)

1:30 PM - 3:30 PM

[19p-PB3-24] CuInS₂ epitaxial films by pulse laser deposition

^○Ryo Yoshida¹, Tseng Po-Han¹, Yong-Gu Shim², Kazuki Wakita¹ (Chiba Inst. of Tech.¹, Osaka Pref. Univ.²)

1:30 PM - 3:30 PM

[19p-PB3-25] CIS-CGS low-temperature growth on GaAs (001) substrate using MEE method

^○Ryuki Taniguchi¹, Sathiabama Thiru¹, Yoshiji Horikoshi¹, Toshiki Makimoto¹ (Waseda Univ.¹)

1:30 PM - 3:30 PM

▲ [19p-PB3-26] Optimization of CIGSe bottom cell for spectral splitting device application

^〇Zacharie Jehl, Hirofumi Fukai, Isamu Matsuyama, Tokio Nakada (Tokyo University of Science)

1:30 PM - 3:30 PM

[19p-PB3-27] Synthesis of Cu-In alloy nanoparticles by using chemical reduction method in aqueous solution and its application for CIS (CuInSe₂) solar cell

^○Hironari Fujiki¹, Shun Yokoyama¹, Hideyuki Takahashi¹, Kazuyuki Tohji¹ (Tohoku Univ.¹)

Sessions

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.5 Compound solar cells

[17p-A28-1~12] 14.5 Compound solar cells

△ [17p-A28-3] Multiple exciton generation in colloidal nanocrystal thin films: Surface ligand effects

▼ [17p-A28-5] Analysis of voltage dependence of two-step photocurrent generation in GaAs/AlGaAs quantum dot solar cells using rate equations

△ [17p-A28-6] The Effect of Si doping in quantum dot solar cells

△ [17p-A28-7] Observation of photocurrent increase due to two-step photon absorption process in a single quantum dot for intermediate band solar cell

△ [17p-A28-8] Two-Step Photon Absorption in InGaAs Quantum Dot Solar Cells Varying Barrier Layers

△ [17p-A28-9] Effect of carrier relaxation to the quantized states in InAs/GaAs quantum dot superlattice solar cell on the two-step photon absorption

[18a-A28-1~11] 14.5 Compound solar cells

▲ [18a-A28-7] Analysis of Internal-luminescence-quantum-yield of Subcells in InGaP/GaAs/Ge triple-junction solar cells and their influence on energy conversion efficiencies

▲ [18a-A28-8] High Optical Transmissivity in Stacked Multi-Junction Solar Cell

▲ [18a-A28-9] Subcell carrier collection efficiencies in multijunction solar cells determined by time-resolved photoluminescence

[18p-A28-1~16] 14.5 Compound solar cells

△ [18p-A28-2] Precursor Solution Dependence on Bandgap of FeS2 Films

△ [18p-A28-4] Fabrication of Cu2ZnSnS4 thin films by mist CVD method and effects of mist sulfurization method

▲ [18p-A28-9] Free carrier dynamics in Cu2ZnSnS4 single crystals investigated by optical pump - THz probe spectroscopy

▲ [18p-A28-11] The investigation of Ge substitution effects in Cu2ZnSnSe4 Thin film solar cells

[19a-A28-1~13] 14.5 Compound solar cells

▲ [19a-A28-3] Investigation on Non-radiative Recombination in CIGS Solar Cells through PT-AFM under Various Incident Light Conditions

△ [19a-A28-9] Suppression of Recombination at a CdS/CIGS Interface by Inserting Cu(In,Ga)3Se5 for Cu(In,Ga)Se2 Solar cells

▲ [19a-A28-11] Effect of Surface Sulfurization on MBE-Grown Cu(In1-x,Gax)Se2 Thin Film

[19p-PB3-1~27] 14.5 Compound solar cells

▲ [19p-PB3-26] Optimization of CIGSe bottom cell for spectral splitting device application

△ [18p-A28-4] Fabrication of Cu₂ZnSnS₄ thin films by mist CVD method and effects of mist sulfurization method

▲ [18p-A28-9] Free carrier dynamics in Cu₂ZnSnS₄ single crystals investigated by optical pump - THz probe spectroscopy

▲ [18p-A28-11] The investigation of Ge substitution effects in Cu₂ZnSnSe₄ Thin film solar cells

△ [19a-A28-9] Suppression of Recombination at a CdS/CIGS Interface by Inserting Cu(In,Ga)₃Se₅ for Cu(In,Ga)Se₂ Solar cells

▲ [19a-A28-11] Effect of Surface Sulfurization on MBE-Grown Cu(In_1-x,Ga_x)Se₂ Thin Film