[17p-A17-1~14] 15.6 IV-group-based compounds

[17p-A17-1] [Young Scientist Oral Presentation Award Speech]（15min.）
Application of Non-relaxation Method for the Threshold Voltage Instability under Gate Stress to 4H-SiC (0001) MOSFET with N2O Oxidation

^○Mitsuru Sometani^1,2, Dai Okamoto¹, Shinsuke Harada¹, Hitoshi Ishimori¹, Shinji Takasu¹, Tetsuo Hatakeyama¹, Manabu Takei², Kazutoshi Kojima¹, Yoshiyuki Yonezawa¹, Kenji Fukuda¹ (AIST ADPERC¹, Fuji Electric²)

Keywords:SiC,MOSFET,Vth変動