Suppression of hump effect in a-InGaZnO thin-film transistors passivated by novel photosensitive passivation layer

Juan Paolo Bermundo

Presentation information

Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Nanocarbon Technology

[18p-A12-1~16] Nanocarbon Technology

Thu. Sep 18, 2014 1:15 PM - 5:30 PM A12 (E301)

2:30 PM - 2:45 PM

▼ [18p-A12-6] Suppression of hump effect in a-InGaZnO thin-film transistors passivated by novel photosensitive passivation layer

^〇(DC)Juan Paolo Bermundo¹, Yasuaki Ishikawa¹, Haruka Yamazaki¹, Kulchaisit Chaiyanan¹, Mami Fujii¹, Toshiaki Nonaka², Yukiharu Uraoka¹ (NAIST¹, AZ Electronic Materials²)

Keywords:InGaZnO reliability,Polysilsesquioxane,passivation

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