Impacts of Orientation and Cross-sectional Shape on Hole Mobility of Si Nanowire MOSFETs

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.4 Devices/Integration Technologies

Thu. Sep 18, 2014 1:30 PM - 5:15 PM A16 (E307)

4:00 PM - 4:15 PM

^○Hiroaki Fujihara¹, Naoya Morioka¹, Hajime Tanaka¹, Jun Suda¹, Tsunenobu Kimoto¹ (Kyoto Univ.¹)

Keywords:移動度,ナノワイヤ,シリコン