[19p-A17-1~11] 13.2 Insulator technology

[19p-A17-1] [Young Scientist Oral Presentation Award Speech]（15min.）
Electron mobility improvement due to GaOx passivation layer formed by pre-deposition anneal in HfO2/In0.53Ga0.47As nMISFET with sub-1.0 nm EOT

^○Minoru Oda¹, Toshifumi Irisawa¹, Jevasuwan Wipakorn¹, Tatsuro Maeda¹, Yuuichi Kamimuta¹, Tsutomu Tezuka¹ (AIST-GNC¹)

Keywords:InGaAs,mobility,high-k